Prof. Dr. Muhammad Mohiuddin
Dr. Muhammad Mohiuddin
Dean & Associate Professor
PAF-Karachi Institute of Economics and Technology
Main Campus, Korangi Creek, Karachi-75190, Pakistan
M Mohiuddin (M 1992, SM 2010) did Bachelor of Electrical Engineering from NED University, Pakistan in 1992. After working for Caterpillar Inc. in Pakistan for about a year he proceeded to USA for graduate studies. During his MS in Electrical Engineering from University of Nebraska, Lincoln, USA he worked on optical characterisation applying Raman spectroscopy and ellipsometry techniques on heavily-doped bulk InGaAs and GaAs/AlGaAs multiple quantum wells. After finishing his MS in 1996, he remained associated with ECE departments of various engineering institutions in Pakistan as a full-time faculty member. In 2007 he started his PhD in the area of compound semiconductor devices and finished it in March 2010 from The University of Manchester, UK. His PhD work and current research interest entail physical and empirical device modelling and RF measurements of InP Double Heterojunction Bipolar Transistors and High Electron Mobility Transistors for high speed, low-power digital applications. He has recently joined Karachi Institute of Economics and Technology (KIET), Pakistan as an Associate Professor.
| Dates | Position Held | Department/Organization/Institution |
| 2002-to date | Professor of Mathematics | KIET, Karachi |
| 1995-2002 | Professor of Mathematics(Teaching B.E & CS) | Usman Institue of Technology, Hamdard University , Karachi. |
| 1998-1994 | Professor of Mathematics(Teaching B.E & M.E ) | PN Engineering college, Karachi |
| 1986-1988 | Professor of Mathematics(Teaching BBA,BCS & MBA ) | Canadian School of Management,Karachi |
| 1966 – 1986 | Professor of Mathematics & HeadHum & Sc.Dept | PAF College of Aeronautical Engg.Karach.(Now at Risalpur) |
| 1961 – 1966 | Assoc.Professor of Mathematics(Teaching B.E & M.E & Research) | University of Engg & Tech. Lahore |
| 1953 – 1961 | Assoc Professor of Mathematics | Islamia College , Gujranwala |
| Publications | 7 Publications |
| 1. | M. Mohiuddin, J. Sexton, R. Knight, T. Tauqeer and M. Missous. Elimination of current blocking in ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors. IEEE Transactions of Electron Devices (December 2010) Vol: 57 issue: 12 pages: 3340-3347 DOI: 10.1109/TED.2010.2074203 |
| 2. | M. Mohiuddin, T.Tauqeer, J.Sexton and M. Missous. Temperature studies of InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors with no Current Blocking. Semicond. Sci.Technol. 25 (2010) 075002. |
| 3. | Y. C. Chang, H. Yao, and M. Mohiuddin (1999). Raman studies of delta-doped semiconductors and quantum wells, J. Appl. Phys. 85, 1616 (1999). DOI:10.1063/1.369294 |
| 1. | T. Tauqeer, J. Sexton, M. Mohiuddin, R. Knight, F Amir and M. Missous (2009). Physical Modeling of base-dopant out diffusion in Single Heterojunction Bipolar Transistors. UK semiconductors 2009 held at University of Sheffield, Sheffield, UK on 1st and 2nd July 2009. |
| 2. | M. Mohiuddin, T.Tauqeer, J.Sexton and M.Missous (2009). Very low-power LVDS driver using InP HBT ECL circuits. UK semiconductors 2009 held at University of Sheffield, Sheffield, UK on 1st and 2nd July 2009. |
| 3. | J. Sexton, T. Tauqeer, M. Mohiuddin and M. Missous (2008). GHz Class Low Power Flash ADC for Broadband Communications. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. International conference on 12-16 October 2008. Digital Object Identifier 10.1109/ASDAM.2008.4743326 |
| 4. | S. Arshad, M. Mohiuddin, A. Bouloukou and M. Missous (2008). Physical Modeling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. International conference on 12-16 October 2008.Digital Object Identifier 10.1109/ASDAM.2008.4743357 |
| 5. | M. Mohiuddin, S. Arshad, A. Bouloukou and M. Missous (2008). 2-D Physical Modeling of δ-doped GaAs/AlGaAs HEMT. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. International conference on 12-16 October 2008. Digital Object Identifier 10.1109/ASDAM.2008.4743318 |
| 6. | T. Tauqeer, J. Sexton, M. Mohiuddin and M. Missous (2008). Low Power GHz Class ADC for Wide-Band Communication Systems. UK semiconductors 2008 held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008. |
| 7. | Shahzad Arshad, M. Mohiuddin, Angeliki Bouloukou, M. Missous (2008). Modeling Kink effect in InAlAs/InGaAs pHEMTs using 2D Physical Device Simulator. UK semiconductors 2008 held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008. |
| 8. | M. Mohiuddin, T. Tauqeer, J. Sexton, S. Arshad, A. Bouloukou and M. Missous (2008). 2-D Physical Modeling of δ-doped GaAs/AlGaAs HEMT. UK semiconductors 2008 held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008. |
| 9. | Shahzad Arshad, M. Mohiuddin, A. Bouloukou and M. Missous (2008). Investigations of the Kink effect in InAlAs/InGaAs pHEMTs. Workshop on Theory, Modeling and Computational Methods for Semiconductor Materials and Nanostructures. University of Manchester, Manchester, UK http://www.eee.manchester.ac.uk/research/groups/mandn/docs/abstractsv3.pdf |
| 10. | M. Mohiuddin, S. Arshad, A. Bouloukou, A. Sobih and M. Missous (2008). Physical Modeling of δ-doped GaAs/AlGaAs HEMT Workshop on Theory, Modeling and Computational Methods for Semiconductor Materials and Nanostructures University of Manchester, Manchester, UK http://www.eee.manchester.ac.uk/research/groups/mandn/docs/abstractsv3.pdf |
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